JPH0621083A - 低出力、低雑音および高出力の応用に適したマイクロ波ヘテロ接合バイポーラ・トランジスタ、およびその製造方法 - Google Patents

低出力、低雑音および高出力の応用に適したマイクロ波ヘテロ接合バイポーラ・トランジスタ、およびその製造方法

Info

Publication number
JPH0621083A
JPH0621083A JP4247083A JP24708392A JPH0621083A JP H0621083 A JPH0621083 A JP H0621083A JP 4247083 A JP4247083 A JP 4247083A JP 24708392 A JP24708392 A JP 24708392A JP H0621083 A JPH0621083 A JP H0621083A
Authority
JP
Japan
Prior art keywords
emitter
base
layer
island
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4247083A
Other languages
English (en)
Japanese (ja)
Inventor
Burhan Bayraktaroglu
ベイラクタログル バーハン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH0621083A publication Critical patent/JPH0621083A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)
JP4247083A 1991-07-31 1992-07-31 低出力、低雑音および高出力の応用に適したマイクロ波ヘテロ接合バイポーラ・トランジスタ、およびその製造方法 Pending JPH0621083A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US738691 1991-07-31
US07/738,691 US5446294A (en) 1991-07-31 1991-07-31 Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same

Publications (1)

Publication Number Publication Date
JPH0621083A true JPH0621083A (ja) 1994-01-28

Family

ID=24969084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4247083A Pending JPH0621083A (ja) 1991-07-31 1992-07-31 低出力、低雑音および高出力の応用に適したマイクロ波ヘテロ接合バイポーラ・トランジスタ、およびその製造方法

Country Status (6)

Country Link
US (2) US5446294A (en])
EP (1) EP0525762B1 (en])
JP (1) JPH0621083A (en])
KR (1) KR930003418A (en])
DE (1) DE69231543T2 (en])
TW (1) TW221520B (en])

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804487A (en) * 1996-07-10 1998-09-08 Trw Inc. Method of fabricating high βHBT devices
US6762479B2 (en) 1998-11-06 2004-07-13 International Business Machines Corporation Microwave array transistor for low-noise and high-power applications
US6303975B1 (en) 1999-11-09 2001-10-16 International Business Machines Corporation Low noise, high frequency solid state diode
FR2805081B1 (fr) * 2000-02-14 2002-10-11 Cit Alcatel Procede de fabrication de transistor bipolaire a double heterojonction sur materiau iii-v
US6600179B2 (en) * 2001-11-01 2003-07-29 M/A-Com, Inc. Power amplifier with base and collector straps
MY148644A (en) * 2005-07-18 2013-05-15 Orion Corp New pharmaceutical compounds
TWI386642B (zh) * 2009-06-29 2013-02-21 Century Display Shenzhen Co 玻璃基板、使用該玻璃基板的檢測方法、以及製作該玻璃基板的矩陣光罩
US9728603B2 (en) 2015-06-22 2017-08-08 Globalfoundries Inc. Bipolar junction transistors with double-tapered emitter fingers
US9899375B1 (en) * 2016-08-02 2018-02-20 Globalfoundries Inc. Co-integration of self-aligned and non-self aligned heterojunction bipolar transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2352404A1 (fr) * 1976-05-20 1977-12-16 Comp Generale Electricite Transistor a heterojonction
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
EP0558100B1 (en) * 1986-04-01 1996-12-04 Matsushita Electric Industrial Co., Ltd. Bipolar transistor
EP0300803B1 (en) * 1987-07-24 1994-06-22 Matsushita Electric Industrial Co., Ltd. High-frequency bipolar transistor and its fabrication method
US5124270A (en) * 1987-09-18 1992-06-23 Kabushiki Kaisha Toshiba Bipolar transistor having external base region
US5063427A (en) * 1987-10-13 1991-11-05 Northrop Corporation Planar bipolar transistors including heterojunction transistors
JP2851044B2 (ja) * 1988-03-30 1999-01-27 株式会社東芝 半導体装置の製造方法
US5012318A (en) * 1988-09-05 1991-04-30 Nec Corporation Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
US4939562A (en) * 1989-04-07 1990-07-03 Raytheon Company Heterojunction bipolar transistors and method of manufacture
JP2804095B2 (ja) * 1989-07-10 1998-09-24 株式会社東芝 ヘテロ接合バイボーラトランジスタ
US5084750A (en) * 1991-02-20 1992-01-28 Raytheon Company Push-pull heterojunction bipolar transistor

Also Published As

Publication number Publication date
US5648278A (en) 1997-07-15
EP0525762A3 (en) 1994-06-29
DE69231543T2 (de) 2001-08-02
DE69231543D1 (de) 2000-12-07
KR930003418A (ko) 1993-02-24
TW221520B (en]) 1994-03-01
EP0525762B1 (en) 2000-11-02
US5446294A (en) 1995-08-29
EP0525762A2 (en) 1993-02-03

Similar Documents

Publication Publication Date Title
EP0747964B1 (en) Fully self-aligned submicron heterojunction bipolar transistor and method of fabricating the same
US5512496A (en) Method of making collector-up bipolar transistor having improved emitter injection efficiency
US4731340A (en) Dual lift-off self aligning process for making heterojunction bipolar transistors
US8697532B2 (en) InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer
CN100394582C (zh) 异质结双极晶体管的结构及方法
US5548141A (en) Bipolar transistor having a self emitter contact aligned
KR100270415B1 (ko) 혼합된 도펀트를 이용한 pn 접합 확산 장벽 및 그 제조 방법
US5344786A (en) Method of fabricating self-aligned heterojunction bipolar transistors
US5930636A (en) Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes
JPH0621083A (ja) 低出力、低雑音および高出力の応用に適したマイクロ波ヘテロ接合バイポーラ・トランジスタ、およびその製造方法
US5434091A (en) Method for making collector up bipolar transistors having reducing junction capacitance and increasing current gain
KR100434659B1 (ko) 콜렉터-업 ｒｆ 전력 트랜지스터
JPH1070134A (ja) ダブルヘテロ構造バイポーラトランジスタデバイスの製造方法
US4967253A (en) Bipolar transistor integrated circuit technology
US5528060A (en) Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications
US7354820B2 (en) Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
US5471078A (en) Self-aligned heterojunction bipolar transistor
KR100580115B1 (ko) 자기 정렬 쌍극자 반도체 소자 및 제작 방법
KR100568567B1 (ko) 이종 접합 쌍극자 트랜지스터 및 그 제조 방법
JPH0845958A (ja) ヘテロ接合バイポーラトランジスタのベース−コレクタ接合の寄生キャパシタンス減少方法
US6448162B1 (en) Method for producing schottky diodes
JP2001326229A (ja) ヘテロ接合バイポーラトランジスタ及びその製造方法
KR100396919B1 (ko) 반도체 집적소자 제조 방법
JP2835237B2 (ja) ヘテロ接合半導体集積回路
JP3104282B2 (ja) 半導体装置の製造方法